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    • Focus Areas >
      • Memory >
        • Samsung 21nm TLC NAND Flash
        • Samsung V-NAND Flash
        • SanDisk 20nm Flash
      • MCU/Processor
      • RF
      • Power Management >
        • AC/DC
        • DC/DC
        • BUCK
        • Boost
        • Driver
        • LDO
        • Regulator
        • Power Management
      • Sensor >
        • Qualcomm Snapdragon Sense ID sensor
      • RFID
      • Frequency Synthesizers
      • ADC/DAC
      • Power Amplifier
      • Other ICs
    • RE Software
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  • Reports
    • Device Library
    • Report Format
  • Contact
  • Home
  • Lab
    • Decapsulation
    • Delayering
    • Imaging
    • Process Analysis
  • Engineering
    • Focus Areas >
      • Memory >
        • Samsung 21nm TLC NAND Flash
        • Samsung V-NAND Flash
        • SanDisk 20nm Flash
      • MCU/Processor
      • RF
      • Power Management >
        • AC/DC
        • DC/DC
        • BUCK
        • Boost
        • Driver
        • LDO
        • Regulator
        • Power Management
      • Sensor >
        • Qualcomm Snapdragon Sense ID sensor
      • RFID
      • Frequency Synthesizers
      • ADC/DAC
      • Power Amplifier
      • Other ICs
    • RE Software
    • For Semiconductor Manufacturer
    • For IP firms
  • Reports
    • Device Library
    • Report Format
  • Contact

Memory

Science Vision combines expertise in analyzing process and circuit technology with a fact-based approach that allows clients to explore the unique attributes of the technology being examined.  Areas of Specialty:

• Dynamic Random Access Memory (DRAM)
• Static Random Access Memory (SRAM)
• Flash Memory
• Ferroelectric Random Access Memory
• Erasable/Electrically Erasable Programmable Read-Only Memory(EPROM\EEPROM)
• Read-only Memory(ROM)
Samsung 21nm TLC NAND Flash basic analysis data
Samsung V-NAND Flash basic analysis data
SanDisk 20nm Flash basic analysis data
Nanya 45nm LPDDR2 DRAM basic analysis data
图片
sv_ddr_sample_report.pdf
File Size: 8900 kb
File Type: pdf
Download File


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